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| Patent ID | Title | Date Filed |
| 7187580 | Magnetic memory with structure providing reduced coercivity
| September 9, 2005 |
| 7187578 | Magnetic elements having unique shapes
| January 31, 2006 |
| 7187576 | Read out scheme for several bits in a single MRAM soft layer
| August 25, 2004 |
| 7184302 | Highly efficient segmented word line MRAM array
| March 30, 2005 |
| 7184300 | Magneto resistance random access memory element
| January 9, 2003 |
| 7180772 | High-density NVRAM
| July 11, 2005 |
| 7177180 | Method and apparatus for reading data from a ferromagnetic memory cell
| March 25, 2005 |
| 7177178 | magnetic memory layers thermal pulse transitions
| December 2, 2005 |
| 7173848 | Magnetic random access memory with memory cell stacks having more than two magnetic states
| February 1, 2005 |
| 7173846 | Magnetic RAM and array architecture using a two transistor, one MTJ cell
| February 13, 2003 |
| 7173841 | Magnetic memory array
| December 3, 2004 |
| 7170778 | High speed low power magnetic devices based on current induced spin-momentum transfer
| October 13, 2005 |
| 7170776 | Non-volatile memory device conducting comparison operation
| March 29, 2006 |
| 7170775 | MRAM cell with reduced write current
| January 6, 2005 |
| 7167391 | Multilayer pinned reference layer for a magnetic storage device
| February 11, 2004 |
| 7167389 | Magnetic random access memory with a reference cell array and dummy cell arrays
| March 22, 2004 |
| 7164598 | Methods of operating magnetic random access memory device using spin injection and related devices
| August 11, 2005 |
| 7161829 | Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
| September 19, 2003 |
| 7158407 | Triple pulse method for MRAM toggle bit characterization
| April 29, 2005 |
| 7154798 | MRAM arrays and methods for writing and reading magnetic memory devices
| April 27, 2005 |
| 7154777 | Memory device capable of stable data writing
| August 24, 2005 |
| 7154776 | Thin film magnetic memory device writing data with bidirectional current
| February 7, 2006 |
| 7154773 | MRAM cell with domain wall switching and field select
| March 31, 2005 |
| 7154771 | Method of switching an MRAM cell comprising bidirectional current generation
| February 9, 2005 |
| 7151691 | Magnetic random access memory
| September 9, 2004 |
| 7151304 | Method to reduce switch threshold of soft magnetic films
| January 18, 2005 |
| 7149106 | Spin-transfer based MRAM using angular-dependent selectivity
| October 22, 2004 |
| 7144744 | Magnetoresistive random access memory device structures and methods for fabricating the same
| October 27, 2004 |
| 7142474 | Magnetic memory device and recording control method for magnetic memory device
| September 18, 2002 |
| 7142448 | Method and system for data communication on a chip
| August 25, 2005 |
| 7142447 | Nonvolatile memory device with variable resistance element
| May 20, 2005 |
| 7140096 | Method of manufacturing a magnetoresistance effect device
| July 25, 2003 |
| 7139191 | Memory device and method of use
| November 7, 2005 |
| 7136300 | Magnetic memory device including groups of series-connected memory elements
| October 6, 2003 |
| 7136298 | Magnetic random access memory array with global write lines
| June 30, 2004 |
| 7133312 | Readout circuit for semiconductor memory device based on a number of pulses generated by a voltage-controlled oscillator
| September 3, 2004 |
| 7133309 | Method and structure for generating offset fields for use in MRAM devices
| January 10, 2005 |
| 7129555 | Magnetic memory with write inhibit selection and the writing method for same
| September 19, 2002 |
| 7129098 | Reduced power magnetoresistive random access memory elements
| November 24, 2004 |
| 7126849 | Magnetic cell and magnetic memory
| September 16, 2005 |
| 7126848 | Magnetic cell and magnetic memory
| August 30, 2005 |
| 7126843 | Semiconductor memory device using magnetoresistive effect
| August 9, 2002 |
| 7126201 | Magnetic random access memory
| July 3, 2003 |
| 7123505 | Method of reading information in a magnetic memory by a reversible resistance change in a magnetic tunnel junction
| April 19, 2004 |
| 7120049 | Magnetic cell and magnetic memory
| April 18, 2006 |
| 7120048 | Nonvolatile memory vertical ring bit and write-read structure
| June 21, 2004 |
| 7116576 | Sensing the state of a storage cell including a magnetic element
| October 1, 2004 |
| 7116575 | Architectures for CPP ring shaped (RS) devices
| March 23, 2005 |
| 7113424 | Energy adjusted write pulses in phase-change memories
| November 23, 2004 |
| 7112454 | System and method for reducing shorting in memory cells
| October 14, 2003 |
| 7112354 | Electron spin mechanisms for inducing magnetic-polarization reversal
| February 3, 2005 |
| 7110290 | Thin film magnetic memory device storing program information efficiently and stably
| June 2, 2005 |
| 7110289 | Method and system for controlling MRAM write current to reduce power consumption
| March 31, 2004 |
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