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Your search returned 262 patents.
( 257/E43.004 in Current US Classification )
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Patent IDTitleDate Filed
6388847 Specular spin valve with robust pinned layer February 1, 2000
6381171 Magnetic element, magnetic read head, magnetic storage device, magnetic memory device May 17, 2000
6368706 Magnetoresistance effect element July 8, 1998
6365948 Magnetic tunneling junction device March 26, 1997
6365286 Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system September 2, 1999
6352621 Method of manufacturing film laminate having exchange anisotropic magnetic field August 17, 2000
6349053 Spin dependent tunneling memory June 26, 2001
6339330 Magnetic head September 12, 2000
6335675 Semiconductor magnetoresistance device, making method and magnetic sensor March 17, 2000
6331773 Pinned synthetic anti-ferromagnet with oxidation protection layer April 16, 1999
6317300 Magnetoresistive device having magnetoresistive film and magnetic bias film with side-end faces with different angles of inclination and having insulating film made of electrically insulating material July 6, 1999
6312840 Magnetic tunneling element and manufacturing method therefor September 16, 1999
6301089 Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer August 2, 1999
6295225 Magnetic tunnel junction device having an intermediate layer March 31, 2000
6278593 Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect December 21, 1999
6275411 Spin dependent tunneling memory November 8, 1999
6256223 Current-induced magnetic switching device and memory including the same June 20, 2000
6249407 Magnetoresistive device having a tantalum layer connected to a shielding layer via a layer of a body-centered cubic structure October 1, 1999
6232777 Tunneling magnetoresistive element and magnetic sensor using the same August 14, 1998
6215631 Magnetoresistive effect film and manufacturing method therefor October 9, 1997
6183890 Magneto-resistance effect device and method of manufacturing the same October 22, 1998
6178073 Magneto-resistance effect element with a fixing layer formed from a superlattice of at least two different materials and production method of the same November 20, 1998
6169303 Ferromagnetic tunnel junctions with enhanced magneto-resistance January 6, 1998
6165287 Ferromagnetic tunnel-junction magnetic sensor August 10, 1999
6159593 Magnetoresistance effect element April 16, 1998
6150045 Spin-valve type magnetoresistive thin film element and its manufacturing method September 16, 1998
6147843 Magnetoresistive effect element having magnetoresistive layer and underlying metal layer January 24, 1997
6144524 Spin valve magnetoresistance device and method of designing the same April 7, 1999
6130814 Current-induced magnetic switching device and memory including the same July 28, 1998
6128167 Spin-valve magnetoresistive element May 19, 1998
6124711 Magnetic sensor using tunnel resistance to detect an external magnetic field January 17, 1997
6122151 Spin-valve magnetoresistive element August 18, 1999
6118624 Magneto-resistance effect element having a magnetic biasing film April 29, 1998
6117697 Solid state magnetic field sensor method July 27, 1998
6115224 Spin-valve type thin film element and its manufacturing method October 23, 1998
6111784 Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element September 16, 1998
6111722 Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same May 4, 1998
6110751 Tunnel junction structure and its manufacture and magnetic sensor April 8, 1998
6103406 Magnetic tunnel device June 4, 1998
6101071 MR film with upper and lower magnetic layers with resistivity greater than that of MR film magnetic layers August 4, 1997
6090498 Magnetoresistance effect element and magnetoresistance device October 15, 1997
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